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Photoreflectance Spectroscopy of Electron-Hole States in a Graded-Width GaAs/InGaAs/GaAs Quantum Wellстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Avakyants L.P., Bokov P.Y., Glazyrin E.V., Kazakov I.P., Chervyakov A.V.
- Журнал: Semiconductors
- Том: 45
- Номер: 3
- Год издания: 2011
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 320
- Последняя страница: 324
- DOI: 10.1134/S1063782611030043
- Аннотация: The spectrum of electron-hole states in a GaAs/In0.5Ga0.5As quantum well with a width graded in the range from 1.1 to 3.6 nm is studied by photoreflectance spectroscopy. The energies of the size-quantization levels of electrons and holes are calculated taking into account the strain-induced changes in the band structures of the quantum well. It is shown that the best fit of the experimental data to the results of calculations is attained if the ratio between the offset of the conduction band and that of the valence band at the heterojunction is Q = ΔEc/ΔEv = 0.62/0.38. A photoreflectance signal is detected in the region of the shadow of modulating radiation beam at a spacing between the spots produced by probing and modulating radiation shorter than 6 mm. © 2011 Pleiades Publishing, Ltd.
- Добавил в систему: Боков Павел Юрьевич