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Polarization mode switching and tuning in p-AlGaAs/GaAsP/n-AlGaAs diodes by compressive stressстатья
- Авторы: Kolokolov K.I., Bogdanov E.V., Minina N.Ya
- Журнал: J Laser Opt Photonics
- Том: 3
- Номер: 3 (Suppl)
- Год издания: 2016
- Первая страница: 100
- Последняя страница: 100
- DOI: 10.4172/2469-410X.C1.009
- Аннотация: We performed a set of experiments and numerical calculations on strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures under uniaxial stress. These structures are widly used in commercial laser diodes emitting at 766 – 808 nm. The results show that polarization of emitted light can be extremely sensitive to external uniaxial stress due to the change of wave functions and optical transitions between the subband levels in the quantum well.
- Добавил в систему: Богданов Евгений Владимирович