Electron energy relaxation under terahertz excitation in (Cd1-xZnx)3As2 Dirac semimetalsстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 27 февраля 2017 г.
Аннотация:We demonstrate that measurements of the photoelectromagnetic effect using terahertz laser radiation provide an argument for existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd1-xZnx)3As2. We performed a study of a range of (Cd1-xZnx)3As2 mixed crystals undergoing a transition from the Dirac semimetal phase with the inverse electron energy spectrum to trivial semiconductor with the direct spectrum in the crystal bulk at variation of the composition x. We show that for the Dirac semimetal phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the power in a laser pulse irrespective of its wavelength. We assume that such behavior is attributed to a strong damping of the inter-electron interaction in the Dirac semimetal phase compared to the trivial semiconductor which may be due, in its turn, to formation of surface electron states with a spin texture in Dirac semimetals.