Место издания:IOP Enterprises Conference Management UK
Первая страница:P.31
Аннотация:In this paper, using the “Heterostructure Design Studio 2.1” program and following the previously described procedure of numerical calculations, we obtain data on gTM/gTE behaviour for a typical AIIIBV laser diode structure p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs in a broad interval of quantum well (QW) width d (4<d<20 nm) and phosphor composition y (0<y<0.2) under uniaxial compression up to P = 10 kbar in [100], [110] and [001] crystallography directions. For the first time, we have demonstrated not only the possibility of effective TM/TE mode tuning but also TM - TE switching of the dominant polarization mode by external uniaxial stress.