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Transfer- and lithography-free CVD of N-doped graphenic carbon thin films on non-metal substratesстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 6 июля 2022 г.
- Авторы: Sedlovets Daria M., Redkin Arkady N., Kabachkov Evgeny N., Naumov Anton P., Knyazev Maxim A., Moiseenko Andrey V., Korepanov Vitaly I.
- Журнал: Materials Research Bulletin
- Год издания: 2022
- Издательство: Pergamon Press Ltd.
- Местоположение издательства: United Kingdom
- Первая страница: 111943
- DOI: 10.1016/j.materresbull.2022.111943
- Аннотация: Although CVD is a very promising approach to the synthesis of nitrogen-doped graphenic carbon thin films (N-GCTFs), the vast majority of methods require the use of a metal catalyst, and a post-deposition transfer process, which complicates the technology, as well as damages and contaminates the films. Here, we described a simple, low-cost and scalable approach for the completely direct (transfer- and lithography-free) deposition of N-GCTFs on dielectric substrates through pyrolysis of acetonitrile (CH3CN). GCTFs are defined as multi-layer graphene films with few-nm thickness. The N/C ratio is about 2-3 %, and nitrogen is mainly contained in the graphitic form. Raman spectroscopy and TEM indicate a nanocrystalline structure of the films. The values of transmittance and sheet resistance are found significantly depending on the synthesis temperature and time. The films can be grown selectively on the e-beam pre-patterned areas of the substrates. We demonstrate this by lithography-free growing of N-GCTF microstructure.
- Добавил в систему: Кабачков Евгений Николаевич
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | Полный текст | 1-s2.0-S002554082200215X-main.pdf | 2,1 МБ | 24 июня 2022 [evg] |