Аннотация:Surface modification of polycrystalline thin films of aluminum nitride using bombardment with an cluster ion beam has been investigated. The treatment has been performed using high-energy (105 eV/atom) and low-energy (10 eV/atom) argon cluster ions. High-efficiency smoothing of the nanostructured surface in a wide range of spatial frequencies (v = 0.02–128 μm–1) at ultrasmall etching depth (<100 nm) is demonstrated by atomic force microscopy with the application of the power spectral density function of roughness.