Аннотация:The self-ordered anodic aluminium oxide (AAO) structure consists of micron-scale domains—defect-free areas with a hexagonal arrangement of pores. A substantial increase in domain size is possible solely by pre-patterning the aluminium surface in the form of a defect-free hexagonal array of concaves, which guide the pore growth during subsequent anodization. Among the numerous pre-patterning techniques, direct etching by focused gallium ion beam (Ga FIB) allows the preparation of AAO with a custom-made geometry through precise control of the irradiation positions, beam energy, and ion dosage. The main drawback of the FIB approach includes gallium contamination of the aluminium surface. Here, we propose a multi-step anodizing procedure to prevent gallium incorporation into the aluminium substrate. The suggested approach successfully covers a wide range of AAO interpore distances from 100 to 500 nm. In particular, anodization of FIB pre-patterned aluminium in 0.1 M phosphoric acid at 195 V to prepare AAO with the interpore distance of about 500 nm was demonstrated for the first time. The quantification of the degree of pore ordering reveals the fraction of pores in hexagonal coordination above 96% and the in-plane mosaicity below 3° over an area of about 1000 μm2. Large-scale defect-free AAO structures are promising for creating photonic crystals and hyperbolic metamaterials with distinct functional properties.
