Vanadium-induced deep impurity level in Pb1-xSnxTeстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The galvanomagnetic properties (T = 4.2-300 K, B <= 0.08 T) of Pb1-x-ySnxVyTe alloys (x = 0.06-0.26, y = 0.002-0.066) have been investigated. Low temperature activation range of the impurity conductivity on the temperature dependencies of resistivity rho and of the Hall coefficient R-H in the heavily doped samples has been revealed and attributed to the appearance of vanadium-induced deep level in the gap of the alloys. It was found that in insulating phase alloys possess a high photosensitivity to IR excitation at temperatures up to T-c approximate to 40 K. In the alloy with x approximate to 0.2 the metal-insulator transition due to the shift of the Fermi level from the valence band to the gap with the increase of the vanadium and tin content and the pinning of the Fermi level by vanadium level were observed. The diagram of electronic structure reconstruction for Pb1-x-ySnxVyTe alloys was proposed. (C) 2009 Elsevier B.V. All rights reserved.