Ignition and propagation of a solitary wave of the formation of point defects as a result of intense laser generation of electron — hole pairs in semiconductors and dielectricsстатья
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Дата последнего поиска статьи во внешних источниках: 29 ноября 2013 г.
Аннотация:
A model of a solitary defect-generation wave is developed by analogy with the combustion wave model. This solitary wave is initiated and propagates in semiconductors and dielectrics as a result of intense laser generation of electron — hole pairs. The following characteristics of a defect-generation wave are determined analytically: the critical intensity of ignition of the wave; the profile and propagation velocity of the wave; the concentration of point defects generated by the wave. The results obtained are used to provide a quantitative interpretation of an experimental study of the damage to the surface of Si by repeated picosecond pulses