Defect-deformation mechanism of the formation of a pore ensemble in semiconductor and metal etching: Theory and experimentстатья
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Дата последнего поиска статьи во внешних источниках: 7 декабря 2013 г.
Местоположение издательства:[Bristol, UK], England
Первая страница:1442
Последняя страница:1452
Аннотация:Defect-deformation (DD) theory of the formation of ensembles of seed pores in semiconductor and metal etching is developed. The key concept of this theory is the generation and DD self-organization of interstices and vacancies in the process of etching. Experiments aimed at testing this theory have been performed. Experimental results agree well with theoretical predictions in the case of p-Si. A quasi-hexagonal order in macropore arrangement on a surface is revealed. The possibility of controlling the properties of an ensemble by applying external elastic stresses is demonstrated. The experimental dependence of the surface density of the pore number on the level of doping is presented. The dynamics of the formation of a pore ensemble is investigated