Аннотация:The theory of amorphization under pulsed laser melting of surfaces of crystalline semiconductors, based on mechanism of point defect capture and formation of nanometer periodic defect-deformational structures, is developed. The critical defect concentration and critical solidification front velocity at exceeding of which amorphization occurs are
determined. The hierarchy of structural transformations at surface after melt solidification observed with decrease of laser fluency is analytically described