Electrical and Gas Sensor Properties of Nb(V) Doped Nanocrystalline β-Ga2O3

Авторы: Andreev Matvei, Topchiy Maxim, Asachenko Andrey, Beltiukov Artemii, Amelichev Vladimir, Sagitova Alina, Maksimov Sergey, Smirnov Andrei, Rumyantseva Marina, Krivetskiy Valeriy
Журнал: Materials
Том: 15
Номер: 24
Год издания: 2022
Издательство: MDPI
Местоположение издательства: Basel, Switzerland
Первая страница: 8916
DOI: 10.3390/ma15248916
Аннотация: A flame spray pyrolysis (FSP) technique was applied to obtain pure and Nb(V)-doped nanocrystalline β-Ga2O3, which were further studied as gas sensor materials. The obtained samples were characterized with XRD, XPS, TEM, Raman spectroscopy and BET method. Formation of GaNbO4 phase is observed at high annealing temperatures. Transition of Ga(III) into Ga(I) state during Nb(V) doping prevents donor charge carriers generation and hinders considerable improvement of electrical and gas sensor properties of β-Ga2O3. Superior gas sensor performance of obtained ultrafine materials at lower operating temperatures compared to previously reported thin film Ga2O3 materials is shown.
Добавил в систему: Кривецкий Валерий Владимирович

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