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Stimulated Opticaltransitions in Er-Doped Silicon Nanostructuresстатья
- Авторы: Kamenev B.V., Emel'yanov V.I., Timoshenko V.Yu, Kashkarov P.K., Lomonosov M.V., Terukov E.I., Kudoyarova V.Kh
- Сборник: MRS Proceedings
- Серия: Stimulated Optical transitions in Er-Doped Silicon Nanostructures
- Том: 737
- Год издания: 2003
- Место издания: USA
- DOI: 10.1557/PROC-737-F9.2
- Аннотация: Photoluminescence (PL) of Er3+ ions in nanocrystalline (amorphous) silicon matrix has been investigated under a high level of optical excitation. A superlinear increase of the PL intensity, a shortening of the PL decay time, and strong angular dependence were found at the excitation intensity above 200 kW/cm2. These effects are observed only in samples with presence of silicon nanocrystalls and explained by stimulated optical transitions
- Добавил в систему: Емельянов Владимир Ильич