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Characteristics of SiO xN y, films deposited by PECVD at low-temperature using BTBAS-NH 3-O 2(Article)статья
- Авторы: Lee J.H., Jeong C.H., Lim J.T., Zavaleyev V.A., Min K.S., Kyung S.J., Yeom G.Y.
- Журнал: Journal of the Korean Physical Society
- Том: 48
- Номер: 1
- Год издания: 2006
- Издательство: Han'guk Mulli Hakhoe
- Местоположение издательства: Korea, Republic of
- Первая страница: 89
- Последняя страница: 92
- Аннотация: In this study, SiO xN y films were deposited at low temperature (<75 °C) by inductively coupled plasma chemical vapor deposition (CVD) while biasing the substrate at -80 V using BTBAS/(O 2/NH 3). The effects of the oxygen ratio (defined as O 2/(O 2 + NH 3)) on the characteristics of the deposited films were investigated. On increasing the oxygen ratio, decreases of C-H and the N-H bonds in the films could be obtained in the deposited SiO xN y, film while the Si-O bonds increased. Due to low C-H and N-H bond densities in the films with increasing oxygen ratio, the films became more stable, harder, and more transparent. When the oxygen ratio was close to 1, SiO xN y, resembling SiO 2 with a refractive index of 1.46 was obtained. The oxygen rich SiOzNy films produced using O 2-BTBAS/Ar are believed to be useful as transparent diffusion barrier materials for the polymeric materials used as organic light-emitting diodes and flexible displays.
- Добавил в систему: Завалеев Виктор Анатольевич