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Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers MoxW1–xSe2/WSe2статья
- Авторы: Liubomirov A.D., Kravtsov V., Cherbunin R.V.
- Журнал: Semiconductors
- Том: 54
- Номер: 11
- Год издания: 2020
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 1518
- Последняя страница: 1521
- DOI: 10.1134/s1063782620110196
- Аннотация: We study spin-valley relaxation dynamics in two-dimensional MoxW1–xSe2/WSe2 heterobilayers with different relative Mo/W concentration x in the monolayer alloy. Three types of heterobilayers with x = 1.00, 0.50, 0.33 are studied in time-resolved Kerr rotation experiments for different wavelengths and temperatures. The spin-valley relaxation times are found to decrease from ~10 nanoseconds for x = 1.00 to ~50 ps for x = 0.33. The observed relaxation times are limited by the recombination of indirect excitons formed in the heterobilayers. Our results demonstrate that spin-valley relaxation in alloy-based van der Waals heterostructures can be controlled via their chemical composition.
- Добавил в систему: Коновко Андрей Андреевич