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Growth of a Carbon Nanotube Forest on Silicon using Remote Plasma CVDстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 мая 2014 г.
- Авторы: Ismagilov Rinat R., Shvets Petr V., Zolotukhin Aleksey A., Obraztsov Alexander N.
- Журнал: Chemical Vapor Deposition
- Том: 19
- Номер: 10-11-12
- Год издания: 2013
- Издательство: John Wiley & Sons Ltd.
- Местоположение издательства: United Kingdom
- Первая страница: 332
- Последняя страница: 337
- DOI: 10.1002/cvde.201207031
- Аннотация: CVD enhanced by remote plasma is applied to produce carbon film material on silicon substrates. The layers of aligned multiwall carbon nanotubes (MWCNT) are obtained without a metal catalyst by deposition from a methane/hydrogen gas mixture activated by a direct current (DC) discharge. The individual MWCNTs in the films consist of 4–7 concentric carbon shells with a spacing of 0.34 nm. An absence of metallic impurities in the MWCNT film material is confirmed using energy dispersive X-ray (EDX) and electron energy loss spectroscopy (EELS) analyses. A proposed model explains the formation of the cylindrical seeds of the MWCNTs via condensation of carbon atoms from the activated gaseous environment on the inner surfaces of pores, created in the substrate material as a result of silicon etching by ionized hydrogen, generated in the DC discharge plasma. Further growth of these seeds during the CVD process leads to the formation of MWCNT forests.
- Добавил в систему: Исмагилов Ринат Рамилович