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Low Concentration c-Si Solar Cell With ARC of TCO and Gridlines of Wireстатья
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Zaks M.B., Sitnikov A.M., Solodukha O.I., Shvarts M.Z.
- Сборник: Proceedings 24th European Photovoltaic Solar Energy Conference
- Год издания: 2009
- Место издания: WIP Munich Munich
- Первая страница: 1702
- Последняя страница: 1704
- DOI: 10.4229/24thEUPVSEC2009-2CV.2.81
- Аннотация: Previously, using a thin film of Fluorine doped Indium Oxide (IFO) as transparent electrode and gridlines made of copper wire, i.e. the so-called Laminated Grid Cell (LGCell) design, we prepared concentrator solar cell based on the IFO/(n+pp+)Cz-Si structure, which revealed the series resistance of 0.24 Ω cm2 and the optimal concentration level of 3-4X. It was concluded that the application of a thinner silicon wafer with lower resistivity (as compared with the values of 320 μm and 5 Ω·cm used previously) will result in the increase of the optimal concentration level. In the present work for the manufacturing of the LGCells we used 200 μm thick Cz-Si wafers with the resistivity of 0.5 Ω·cm. The series resistance of the cell reduced down to 0.13 Ω·cm2 and, correspondingly, the optimal operating level increased up to ~7X. Obtained LGCells showed the efficiency of 15.25% at 1X and 16.25% at 7X. Thus, we have proved that LGCell design of contact system is acceptable for manufacturing lowconcentrator silicon solar cells.
- Добавил в систему: Унтила Геннадий Григорьевич