Deep impurity levels in vanadium-doped Pb(1-x)Mn(x)Te solid solutionsстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Measurements of electric and magnetic properties of Pb(1-x)Mn(x)Te(V) solid solutions have been performed in the temperature range 4.2-300 K. It is demonstrated that the Fermi level position in this semiconductor is defined by formation of an impurity level within the bandgap of the material. Realization of a semi-insulating state at low temperatures is accompanied by absence of the persistent photoconductivity effect and by high homogeneity of electrical parameters in Pb(1-x)Mn(x)Te(V) which is a unique combination. Measurements of electric properties in the ac field reveal that the main mechanism of the low temperature transport is the hopping conductivity. Pb(1-x)Mn(x)Te(V) demonstrates a paramagnetic behavior at all temperatures, at least above 10 K.