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Properties of diode heterostructures based on nanocrystalline n-SnO2 on p-Si under the conditions of gas adsorptionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Vasil'ev R.B., Gas'kov A.M., Rumyantseva M.N., Ryzhikov A.S., Ryabova L.I., Akimov B.A.
- Журнал: Semiconductors
- Том: 34
- Номер: 8
- Год издания: 2000
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 955
- Последняя страница: 959
- DOI: 10.1134/1.1188107
- Аннотация: Heterostructures n-SnO2(Me)/p-Si (Me = Cu, Pd, or Ni) with a SnO2 layer thickness 0.8-1 mu m were synthesized. The average size of tin dioxide crystallite was 6-8 nm. The current-voltage characteristics of the structures were measured in dry air under the conditions of NO2 and C2H5OH adsorption. The current-voltage characteristics measured in ambient air were satisfactorily described within the diode theory with large nonideality factors: beta similar to 8-18. Gas molecule adsorption substantially modifies the current-voltage characteristics in the range of both forward and reverse biases. The shape of the current-voltage characteristics was explained taking into account activation transitions through a barrier whose height can either decrease or increase depending on the adsorbed molecule type and changes in tunnel processes at the interface. (C) 2000 MAIK "Nauka/Interperiodica".
- Добавил в систему: Васильев Роман Борисович