Effect of interdiffusion on electrical and gas sensor properties of CuO/SnO2 heterostructureстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The influence of annealing on the electrical and H2S gas sensor properties of p-CuO/n-SnO2 heterostructures has been investigated. The heterostructures were prepared by magnetron sputtering technique with subsequent oxidation. The depth composition was analyzed by the secondary neutral mass-spectrometry (SNMS) method. The Sn and Cu interdiffusion coefficients at 573 K were estimated as 3 x 10(-14) cm(2) s(-1) and 1 x 10(-15) cm(2) s(-1), respectively. Resistance behavior and high H2S gas sensitivity are associated with the formation of a transitional layer at CuO-SnO2 interface due to interdiffusion processes. (C) 1999 Published by Elsevier Science S.A. All rights reserved.