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IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistorsстатья Исследовательская статья
- Авторы: Petrosyants Konstantin O., Kharitonov Igor A., Sambursky Lev M., Kozhukhov Maxim V.
- Журнал: Advanced materials research
- Том: 1083
- Год издания: 2015
- Издательство: Trans Tech Publications
- Местоположение издательства: Stafa-Zurich, Switzerland, Switzerland
- Первая страница: 185
- Последняя страница: 189
- DOI: 10.4028/www.scientific.net/amr.1083.185
- Аннотация: I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper IV-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.
- Добавил в систему: Кожухов Максим Владимирович