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Temperature transition of p- to n- type conduction in the LiNbO3/Nb2O5 polycrystalline filmsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 мая 2017 г.
- Авторы: Sumets M., Dannangoda G.C., Kostyuchenko A., Ievlev V., Dybov V., Martirosyan K.S.
- Журнал: Materials Chemistry and Physics
- Том: 191
- Год издания: 2017
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 35
- Последняя страница: 44
- DOI: 10.1016/j.matchemphys.2017.01.028
- Аннотация: Abstract Thin polycrystalline films (∼300 nm) with arbitrary grain orientation consisting of two phases, LiNbO3 and Nb2O5, were fabricated by using the Radio-Frequency Magnetron Sputtering (RFMS) method under a controlled Ar/O2 environment. The amount of non-textured Nb2O5 phase is decreased by 20% in the LiNbO3/Nb2O5 films with reducing the oxygen content from 40 to 20% in the reactive gas mixture. The fabricated ferroelectric films exhibited the “local domain texture,” i.e., the area of grains with the identical direction of the polar axis. Hall measurements suggest that two types of carries (holes and electrons) are present in the fabricated LiNbO3/Nb2O5 films and the type of majority charge carriers is changed from holes at low temperatures (∼50 K) to electrons with increasing temperature. At low temperatures charge transport is affected by the properties of the bulk grains with holes concentration of Np = 6.5·1015 cm−3 at temperatures T > 200 K conductivity is limited by the inter-granular barrier φb = 0.13 eV regardless of the applied magnetic field. The presence of Nb2O5 phase is responsible for temperature transition of p- to n-type conduction in the studied films.
- Добавил в систему: Иевлев Валентин Михайлович