Production of and Electronic Transport in Thin Films of Strontium IridateстатьяЭлектронная публикация
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Дата последнего поиска статьи во внешних источниках: 5 июня 2024 г.
Аннотация:Epitaxial thin films of SrIrO3 are studied, and data on their growth technology, crystal structure, and electronic transport are presented. For SrIrO3 films deposited in a mixture of Ar and O2 gases, the temperature dependence of resistance is of the metallic type. For films grown in pure argon, this dependence can be of both metallic and dielectric types, depending on deposition pressure and temperature conditions. The activation energy for dielectric samples is calculated and compared with the activation energy for Sr2IrO4 films.