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Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystalsстатья
- Авторы: Sedov Vadim, Martyanov Artem, Neliubov Arthur, Tiazhelov Ivan, Savin Sergey, Eremchev Ivan, Eremchev Maksim, Pavlenko Margarita, Mandal Soumen, Ralchenko Victor, Naumov Andrei
- Журнал: Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
- Том: 382
- Номер: 2265
- Год издания: 2023
- Издательство: Royal Society of London
- Местоположение издательства: United Kingdom
- DOI: 10.1098/rsta.2023.0167
- Аннотация: Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites.This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.
- Добавил в систему: Коновко Андрей Андреевич