High temperature crystallization of NdAl3(BO3)4 and YAl3(BO3)4, doped with Sc3+ and Ga3+статья
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Дата последнего поиска статьи во внешних источниках: 8 октября 2014 г.
Аннотация:New data on flux growth of mixed crystals of R(Al,M)3(BO3)4, R=Y, Nd, M=Sc, Ga have been obtained. Single crystals were prepared by spontaneous nucleation under different conditions using a K2Mo3O10 based flux. The initial concentration of Sc and Ga doped RAl3(BO3)4 crystalline substance in fluxed melts was varied from 17 to 30 wt%. The average K distribution coefficients were found to be 0.98–0.31 for gallium, but no scandium was found in these materials. Splitting of trigonal prism faces is a specific morphological feature of the crystals grown.