Magnetoresistance of a lateral contact to a two-dimensional electron gasстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Lateral Nb contacts to a high-mobility two-dimensional electron gas (2DEG) in InGaAs heterostructures are studied. Below T-c of Nb a pronounced non-linearity due to the superconducting energy gap is observed in the differential resistance. The Nb/2DEG interface reveals an enhanced zero-bias resistance. In normal state, a drastic decrease of the resistance with increasing magnetic field perpendicular to the plane of the structure is observed. It is explained in terms of a confinement of electron trajectories near the interface with increasing magnetic field yielding an enhanced number of transmitted carriers. The suggested model shows good agreement with experiment. We conclude that the magnetic field strongly influences the effective conductance of weakly transparent contacts.