|
ИСТИНА |
Войти в систему Регистрация |
ИПМех РАН |
||
Anisotropy of long-term resistivity relaxations induced in p-(001)GaAs/Al0.5Ga0.5As by uniaxial stressстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Kravchenko V.N., Minina N.Y., Savin A.M., Berman I.V., Hansen O.P., Sorensen C.B.
- Журнал: High Pressure Research
- Том: 22
- Номер: 2
- Год издания: 2002
- Издательство: Taylor & Francis
- Местоположение издательства: United Kingdom
- Первая страница: 305
- Последняя страница: 308
- DOI: 10.1080/08957950212784
- Аннотация: Anisotropy of the piezoresistance relaxations has been observed in p-(001)GaAs/Al0.5Ga0.5 As heterostructures. The character of relaxation process depends on the direction of the applied uniaxial compression: after loading along [1-10] direction the specimen resistance relaxes down to the lower magnitude while after loading along [110] direction it relaxes up to the higher magnitude. Shubnikov-de Haas oscillations and Hall effect measurements indicate that variation of the carrier concentration in the quantum well during relaxation processes has different signs for uniaxial compression along [1-10] and [110] directions and correlates with the corresponding change of the resistance. The piezoelectric field that in GaAs can reach the magnitude E =(1.152-2) MV/m at uniaxial stress P =1 kbar along <110> directions is supposed to be responsible for the metastable state after loading (unloading) and redistribution of carriers during the relaxation process.
- Добавил в систему: Минина Наталья Яковлевна