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Uniaxial stress influence on 2D electrons concentration and mobility in n-GaAs/AlGaAs:Si in the dark and after illuminationтезисы доклада
- Авторы: Bogdanov Evgeny, Minina Natalia
- Сборник: Book of Abstracts AIRAPT 26 joint with ACHPR 8& CHPC 19 Int. Conference on High Pressure Science and Technology, August 18-th – 23-rd, 2017, Beijing, China
- Тезисы
- Год издания: 2017
- Место издания: Institute of Physics Chinese Academy of Sciences, Center for High Pressure Science & Technology Advanced Research Southern University of Science and Technology Beijing, China
- Первая страница: 635
- Аннотация: High quality n-GaAs/Al0.29Ga0.71As:Si single heterostructures , grown by MBE epitaxy on (001) GaAs substrate were investigated under external [110] uniaxial compression up to P = 3.5 kbar in the dark and after illumination. Illumination by infrared diode at 1.7 K leads, after the diode switching, to the persistent photoconductivity with 2D electron concentration and mobility in the quantum well increased in 2.5 and 4 times correspondingly. Qualitatively, this result implies light excitation of deep DX centers, connected with Si dopant and responsible for the persistent photoconductivity, that is accompanied with decrease of scattering centers after the spacer. Under compression, we observed decrease of 2D electrons mobility and concentration in the persistent photoconductivity PPC state.
- Добавил в систему: Богданов Евгений Владимирович