Место издания:Institute of Physics Chinese Academy of Sciences, Center for High Pressure Science & Technology Advanced Research Southern University of Science and Technology Beijing, China
Первая страница:635
Аннотация:High quality n-GaAs/Al0.29Ga0.71As:Si single heterostructures , grown by MBE epitaxy on (001) GaAs substrate were investigated under external [110] uniaxial compression up to P = 3.5 kbar in the dark and after illumination. Illumination by infrared diode at 1.7 K leads, after the diode switching, to the persistent photoconductivity with 2D electron concentration and mobility in the quantum well increased in 2.5 and 4 times correspondingly. Qualitatively, this result implies light excitation of deep DX centers, connected with Si dopant and responsible for the persistent photoconductivity, that is accompanied with decrease of scattering centers after the spacer. Under compression, we observed decrease of 2D electrons mobility and concentration in the persistent photoconductivity PPC state.