Аннотация:The synthesis of HTS films on bare silicon substrates is restrained by interaction between the oxides being deposited and silicon. The formation of a barium silicate layer distorts the composition of the deposited film and imposes no appreciable limitation on the diffusion of silicon from the substrate. The kinetics of the solid-state reactions between the Y-Ba-Cu-O oxide films and silicon substrates in the temperature range 1000-1200 K suffer no restriction from a Si 3 N 4 layer present on the Si substrate, so the use of Si 3 N 4 to form a barrier layer is inadvisable.