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Efficient TM/TE polarization mode tuning in p-AlGaAs/GaAsP/n-AlGaAs diode nanostructures by uniaxial compressionстатья
- Авторы: Bogdanov E.V., Minina N.Ya, Kubashevskiy E.P.
- Сборник: Reviews and short notes to NANOMEETING-2015. Minsk, Belarus, 26 - 29 May, 2015
- Год издания: 2015
- Место издания: World Scientific Pub. Co. Pte. Ltd Singapore Singapore
- Первая страница: 564
- Последняя страница: 567
- Аннотация: Numerical calculations of the optical gain of TM and TE polarization modes in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs double heterostructures of different quantum well width (from 40 to 200 Ǻ) and phosphor content (y = 0 - 0.20) were performed for different values of the external uniaxial compression along [110], [100] and [001] directions. The results of calculations demonstrate the possibility of the effective TM/TE tuning and switching by uniaxial compression along [100] and [110] directions in A3B5 zinc-blend light emitting diodes with “light hole up configuration” of quantized levels in a quantum well.
- Добавил в систему: Богданов Евгений Владимирович