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Investigation of the gapless state induced by pressure in Hg1−x Cd x Te alloysстатья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 15 мая 2015 г.
- Авторы: Brandt N.B., Belousova O.N., Ponomarev Ya G., Anderson J.R.
- Журнал: Journal of Low Temperature Physics
- Том: 24
- Номер: 3-4
- Год издания: 1976
- Издательство: Springer Verlag
- Местоположение издательства: Germany
- Первая страница: 471
- Последняя страница: 490
- DOI: 10.1007/BF00655271
- Аннотация: We report the results of an experimental study of the gapless state (GS) induced inp-type semimetallic alloys Hg 1−x Cd x Te (0<x<0.15) by pressure. Galvanomagnetic effects in weak magnetic fields (2≤T<300 K) and the Shubnikov-de Haas effect have been investigated in the pressure interval 1≤p<15 kbar. Direct evidence for the existence inp-type semimetallic alloys of an impurity hole band overlapping with the conduction band by 3–4 me V is obtained. At liquid helium temperatures the Fermi level is located in the impurity band, so that two groups of carriers take part in transport effects: “light” electrons in the conduction band and “heavy” holes in the impurity band. The electron Fermi energyE F is proved to be essentially constant during the transition to the GS. A linear dependence of the electron effective mass at the band edgem* (0) upon the gapE g is obtained. A significant role of scattering of electrons into the impurity band at liquid helium temperatures is revealed.
- Добавил в систему: Пономарев Ярослав Георгиевич