X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide

Авторы: Boiko M.E., Sharkov M.D., Karlina L.B., Boiko A.M., Konnikov S.G.
Журнал: Semiconductors MAIK "Nauka/Interperiodica"
Том: 52
Номер: 1
Год издания: 2018
Первая страница: 84
Последняя страница: 87
DOI: 10.1134/S1063782618010074
Аннотация: An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with CuKб1-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C2v in the (001) plane of the sample lattice.
Добавил в систему: Бойко Михаил Евгеньевич

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