ИСТИНА

Suchikova Yana

Соавторы: Попов (Popov) А.И., Usseinov A., Dauletbekova A., Bohdanov I., Lazarenko A., Ковачев С.А., Akilbekov A., Karipbayev Z.T., Koishybayeva Z., Pankratov V., Platonenko A., Purans J.J., Bardus I. показать полностью..., Kenzhina I.E., Kumarbekov K., Manika I., Moskina A., Sugak D., Ubizskii S., Здоровец М., Козловский A.

10 статей

Количество цитирований статей в журналах по данным Web of Science: 4, Scopus: 4

IstinaResearcherID (IRID): 388739572

Деятельность

• Статьи в журналах

  • • 2022 Optical, structural, and mechanical properties of Gd3Ga5O12 single crystals irradiated by 84 Kr+ ions
    • Karipbayev Zh T., Kumarbekov K., Manika I., Dauletbekova A., Kozlovskiy Artem, Sugak D., Ubizskii S., Akilbekov A., Suchikova Yana, Popov Anatoli
    • в журнале Physica Status Solidi (B): Basic Research, издательство John Wiley & Sons Ltd. (United Kingdom) DOI
  • • 2022 The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface
    • Suchikova Yana, Bohdanov Ihor, Kovachov Sergii, Lazarenko Andriy, Bardus Iryna, Dauletbekova Alma, Kenzhina Inesh, Popov Anatoli I.
    • в журнале JOURNAL OF ELECTROCHEMICAL SCIENCE AND ENGINEERING DOI
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    • 2021 Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals
    • Usseinov A., Koishybayeva Zh, Platonenko A., Akilbekov A., Purans J., Pankratov V., Suchikova Y., Popov A.I.
    • в журнале Latvian Journal of Physics and Technical Sciences, издательство Versita (Central European Science Publishers) (Poland), том 58, № 2, с. 3-10 DOI
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    • 2021 Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure
    • Usseinov Abay, Koishybayeva Zhanymgul, Platonenko Alexander, Pankratov Vladimir, Suchikova Yana, Akilbekov A., Zdorovets Maxim, Purans Juris, Popov Anatoli I.
    • в журнале Materials, издательство MDPI (Basel, Switzerland), том 14, № 23, с. 7384 DOI

• Статьи в сборниках

  • • 2022 Formation of porous Ga2O3/GaAs layers for electronic devices
    • Suchikova Yana, Lazarenko Andriy, Kovachov Sergii, Usseinov Abay, Karipbaev Z., Popov Anatoli I.
    • в сборнике 2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET), место издания IEEE, с. 410-413 DOI
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    • 2022 The Mechanism of the Formation of Grain Boundaries Nanopores in Polycrystalline Materials
    • Suchikova Yana, Lazarenko Andriy, Bohdanov Ihor, Usseinov Abay, Karipbaev Z., Popov Anatoli I.
    • в сборнике 2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET), место издания IEEE, с. 419-422 DOI
  • • 2021 Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
    • Bohdanov Ihor, Suchikova Yana, Kovachov Sergii, Peregudova Valentina, Dauletbekova Alma K., Popov Anatoli I.
    • в сборнике 2021 IEEE 12th International Conference on Electronics and Information Technologies (ELIT), место издания IEEE, с. 190-193 DOI
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    • 2021 Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching
    • Suchikova Yana, Lazarenko Andriy, Bohdanov Ihor, Dauletbekova Alma, Usseinov Abay, Popov Anatoli I.
    • в сборнике 2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP), серия IEEE Conference Publications, место издания IEEE, с. 1-4 DOI
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    • 2021 Nanostructure Formation on ZnSe Crystal Surface by Electrochemical Etching
    • Bohdanov Ihor, Suchikova Yana, Kovachov Sergii, Dauletbekova Alma, Usseinov Abay, Popov Anatoli I.
    • в сборнике 2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP), серия IEEE Conference Publications, место издания IEEE, с. 1-4 DOI
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    • 2021 Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells
    • Suchikova Yana, Bohdanov Ihor, Kovachov Sergii, Dannik Lyudmila, Moskina Aleksandra M., Popov Anatoli I.
    • в сборнике 2021 IEEE 12th International Conference on Electronics and Information Technologies (ELIT), место издания IEEE, с. 194-197 DOI