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It is well known that VUV emission from plasma significantly damages low-k films by eliminating methyl groups on pores surface. However, another effect, namely, how the etch rate in plasma depends on VUV emission is not properly investigated. Our simulation showed VUV emission increases the etch rate of a low-k film up to 25% in fluorocarbon plasma. The authors expect the obtained results to be of help for better understanding of the role of the UV emission during etching.