In situ photoluminescence analysis of nonradiative recombination on silicon surfaces treated in fluoride solutionстатья
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Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Аннотация:Recombination at p-type Si(100) surfaces electrochemically treated in NH4F solution is investigated in situ by photoluminescence (PL) under excitation with short pulses of a N-2-laser. By registration of the integrated PL intensity we detect sensitively changes in the surface defect concentration. Periodic variations of the nonradiative recombination rate during electropolishing in the oscillating regime together with surface passivation by hydrogenation are observed. The estimated density of the surface nonradiative centers changes from 10(13) cm(-2) during the electropolishing to 5 x 10(10) cm(-2) for quiescent hydrogenated surfaces.