Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina, P.S.; Podoskin, A.A.; Romanovich, D.N.; Golovin, V.S.; Veselov, D.A.; Slipchenko, S.O.; Pikhtin, N.A.; Bagaev, T.A.; Ladugin, M.A.; Marmalyuk, A.A.; Simakov, V.A.

Авторы: Gavrina P.S., Podoskin A.A., Romanovich D.N., Golovin V.S., Veselov D.A., Slipchenko S.O., Pikhtin N.A., Bagaev T.A., Ladugin M.A., Marmalyuk A.A., Simakov V.A.
Журнал: Semiconductor Science and Technology
Том: 34
Номер: 6
Год издания: 2019
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 065025
DOI: 10.1088/1361-6641/ab1c0a
Аннотация: The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50–1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30–40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm−2, and the energy absorbed in the p-GaAs base during the control pulse was 43–47 pJ.
Добавил в систему: Багаев Тимур Анатольевич

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Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)статья