Аннотация:Исследовано межзонное туннелирование в однобарьерных гетероструктурах.
Evaluation of the characteristics of single barrier structures made from InAs, GaSb and AlGaSb is presented using a two-band model based on the kp method. Band-bending is calculated by solving Poisson's equation. The transfer matrix method is used for the calculation of the transmission probability for interband tunnelling processes. It was shown that peak current density in the InAs/AlGaSb/GaSb heterostructures can be much greater than in the InAs/AlGaSb/InAs diodes.
Статья цитируется в работе
Self–consistent I—V characteristic calculation of RTS with type II heterojunctions
Gergel V.A., Lapushkin I., Zakharova A.A.
в журнале Труды Физико-технологического института, издательство Физико-технологический институт РАН (Москва), том 11, с. 56-60