Аннотация:An analytical method for solving the kinetic equation for hot electrons interacting with polar optical phonons is proposed. The angular and coordinate dependences of the distribution function of nonequilibrium electrons injected into the base of a double heterostructure with monopolar conductivity are found. The current gain of transistors with transfer across active layers is calculated based on this structure. For comparison, a numerical simulation of hot electron transport by the Monte Carlo method is performed, and the results obtained are in good agreement with the analytical model.