VUV radiation impact on O(3P) atom surface loss on Pyrex in dc discharge in mixtures of O2 with Ar, Kr and Xe

Авторы: Ziganshin Ilya, Galiullin K.R., Lopaev Dmitry, Kirillov E.A., Rakhimov A.T.
Журнал: Plasma Sources Science and Technology
Том: 34
Год издания: 2025
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 035007
Номер статьи: 035007
DOI: 10.1088/1361-6595/adbc1b
Аннотация: The effect of additives of Ar, Kr and Xe on the probability of О(3P) surface recombination, gO ,on Pyrex in O2 DC discharge has been studied in order to investigate the impact of vacuum ultraviolet (VUV) radiation on the atom loss. It is shown that within the measurement error, there is no effect of the sort of noble gas, as well as its amount on gO. The fluxes of VUV photons onto the tube surface under the considered conditions have been experimentally estimated. The phenomenological analysis of the results has revealed that the lifetime of reversible surface defects generated by VUV radiation should be small enough to have no effect on the kinetics of surface recombination of oxygen atoms. As estimated, this lifetime cannot exceed several seconds, which corresponds to the activation energy of the defect relaxation process of no more than ∼0.9 eV.
Добавил в систему: Лопаев Дмитрий Викторович

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