On the relaxational characteristics and stability of a-Si:H films grown at high temperaturesстатья
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Дата последнего поиска статьи во внешних источниках: 2 апреля 2015 г.
Аннотация:Some characteristics of photo- and thermal stability in a-Si:H films, which were deposited in triode reactor at 300-390C and which possess different hydrogen concentrations, have been investigated. It has been found that the equilibration temperature increases as hydrogen concentrations decreases.