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Lotkhov S.V.
Соавторы:
Зорин А.Б.
,
Крупенин В.А.
,
Niemeyer J.
,
Преснов Д.Е.
,
Scherer H.
,
Weimann T.
,
Wolf H.
,
Ahlers F.J.
,
Zangerle H.
,
Rinderer L.
,
Арутюнов К.Ю.
,
Bogoslovsky S.A.
,
Pavolotski A.B.
показать полностью...
,
Pekola J.P.
,
Jalali-Jafari B.
,
Kemppinen A.
,
O-P S.
,
Pashkin Y.A.
,
Вышенский С.В.
,
Ahlers F.J.
,
Balashov D.V.
,
Devoille L.
,
Dolata R.
,
F-Im B.
,
Feltin N.
,
G-D W.
,
Götz M.
,
Kafanov S.
,
Khabipov M.
,
Könemann J.
,
Mackrodt B.
,
Maibaum F.
,
Manninen A.J.
,
Piquemal F.
,
Tolkacheva E.M.
,
Rudakov V.
,
Амитонов С.В.
36 статей
,
1 доклад на конференции
,
8 тезисов докладов
Количество цитирований статей в журналах по данным Web of Science: 608, Scopus: 550
IstinaResearcherID (IRID): 543880
Деятельность
Статьи в журналах
2016
Detection of on-chip generated weak microwave radiation using superconducting normal-metal SET
Jalali-Jafari B.
,
Lotkhov S.V.
,
Zorin A.B.
в журнале
Applied Sciences
, издательство
MDPI
(Basel, Switzerland)
, том 6, № 2, с. 35-1-35-15
DOI
2016
Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation
Lotkhov S.V.
,
Jalali-Jafari B.
,
Zorin A.B.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 108, № 17, с. 172603-1-172603-4
DOI
2012
A hybrid superconductor-normal metal electron trap as a photon detector
Lotkhov S.V.
,
Zorin A.B.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 100, № 24, с. 242601-1-242601-3
DOI
2012
Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment
Lotkhov S.V.
,
Zorin A.B.
в журнале
Journal of Physics: Conference Series
, издательство
IOP Publishing
([Bristol, UK], England)
, том 400, с. 042040-042040
DOI
2011
Long hold times in a two-junction electron trap
Kemppinen A.
,
Lotkhov S.V.
,
O-P Saira
,
Zorin A.B.
,
Pekola J.P.
,
Manninen A.J.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 99, с. 142106-142106
DOI
2011
Single-charge escape processes through a hybrid turnstile in a dissipative environment
Lotkhov S.V.
,
O-P Saira
,
Pekola J.P.
,
Zorin A.B.
в журнале
New Journal of Physics
, издательство
IOP Publishing
([Bristol, UK], England)
, том 13, с. 013040-013040
DOI
2011
Towards the observation of phase-locked Bloch oscillations in arrays of small Josephson junctions
Maibaum F.
,
Lotkhov S.V.
,
Zorin A.B.
в журнале
Physical Review B
, издательство
American Physical Society
(United States)
, том 84, с. 174514-174514
DOI
2009
Pumping properties of the hybrid single-electron transistor in dissipative environment
Lotkhov S.V.
,
Kemppinen A.
,
Kafanov S.
,
Pekola J.P.
,
Zorin A.B.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 95, № 11, с. 112507-112507
DOI
2007
Cooper pair transport in a resistor-biased Josephson junction array
Lotkhov S.V.
,
Krupenin V.A.
,
Zorin A.B.
в журнале
IEEE Transactions on Instrumentation and Measurement
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, том 56, № 2, с. 491-494
DOI
2006
Ground-state characterization of Nb charge-phase Josephson qubits
Zangerle H.
,
Könemann J.
,
Mackrodt B.
,
Dolata R.
,
Lotkhov S.V.
,
Bogoslovsky S.A.
,
Götz M.
,
Zorin A.B.
в журнале
Physical Review B
, издательство
American Physical Society
(United States)
, том 73, № 22, с. 224527-1-224527-8
DOI
2006
Low hysteretic behavior of Al/AlOx/Al Josephson junctions
Lotkhov S.V.
,
Tolkacheva E.M.
,
Balashov D.V.
,
Khabipov M.I.
,
F-I Buchholz
,
Zorin A.B.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 89, № 13, с. 132115-132115
DOI
2005
Steps towards a capacitance standard based on single-electron counting at PTB
Scherer H.
,
Lotkhov S.V.
,
G-D Willenberg
,
Zorin A.B.
в журнале
IEEE Transactions on Instrumentation and Measurement
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, том 54, с. 666-669
2003
Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment
Lotkhov S.V.
,
Bogoslovsky S.A.
,
Zorin A.B.
,
Niemeyer J.
в журнале
Physical Review Letters
, издательство
American Physical Society
(United States)
, том 91, № 19, с. 197002-1-197002-4
DOI
2003
Progress in measurements of electron pump by means of a CCC
Feltin N.
,
Devoille L.
,
Piquemal F.
,
Lotkhov S.V.
,
Zorin A.B.
в журнале
IEEE Transactions on Instrumentation and Measurement
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, том 52, № 4, с. 599-603
2001
Operation of a three-junction single-electron pump with on-chip resistors
Lotkhov S.V.
,
Bogoslovsky S.A.
,
Zorin A.B.
,
Niemeyer J.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 78, № 7, с. 946-948
DOI
2000
Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of R-pump
Zorin A.B.
,
Zangerle H.
,
Lotkhov S.V.
,
Niemeyer J.
в журнале
Journal of Applied Physics
, издательство
AIP Publishing
(United States)
, том 88, № 5, с. 2665-2670
DOI
2000
Fewer-junction single-electron trap with an ohmic resistor
Lotkhov S.V.
,
Zorin A.B.
,
Zangerle H.
,
Niemeyer J.
в журнале
Physica B: Condensed Matter
, издательство
Elsevier BV
(Netherlands)
, том 280, с. 403-404
1999
A Superconducting Electrometer Based on the Resitively Shunted Bloch Transistor
Lotkhov S.V.
,
Zangerle H.
,
Zorin A.B.
,
Weimann Th
,
Scherer H.
,
Niemeyer J.
в журнале
IEEE Transactions on Applied Superconductivity
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, том 9, с. 3664-3667
1999
Charging and heating effects in a system of coupled single-electron devices
Krupenin V.A.
,
Lotkhov S.V.
,
Scherer H.
,
Zorin A.B.
,
Weimann Th
,
Ahlers F.J.
,
Niemeyer J.
,
Wolf H.
в журнале
Physical Review B
, издательство
American Physical Society
(United States)
, том 59, № 16, с. 10778-10784
DOI
1999
Highly sensitive electrometers based on single Cooper pair tunneling
Zorin A.B.
,
Lotkhov S.V.
,
Pashkin Yu A.
,
Zangerle H.
,
Krupenin V.A.
,
Weimann Th
,
Scherer H.
,
Niemeyer J.
в журнале
Journal of Superconductivity (Plenum)
, том 12, № 6, с. 747-755
DOI
1999
Resistive-state anomaly in superconducting nanostructures
Arutyunov K.Y.
,
Presnov D.A.
,
Lotkhov S.V.
,
Pavolotski A.B.
,
Rinderer L.
в журнале
Physical Review B
, издательство
American Physical Society
(United States)
, том 59, № 9, с. 6487-6498
DOI
1999
Storage capabilities of a four-junction single-electron trap with an on-chip resistor
Lotkhov S.V.
,
Zangerle H.
,
Zorin A.B.
,
Niemeyer J.
в журнале
Applied Physics Letters
, издательство
AIP Publishing
(United States)
, том 75, № 17, с. 2665-2667
1998
Sensing of dynamic charge states using single-electron tunneling transistors
Krupenin V.A.
,
Lotkhov S.V.
,
Scherer H.
,
Zorin A.B.
,
Ahlers F.J.
,
Niemeyer J.
,
Wolf H.
в журнале
Physics Uspekhi
, издательство
Russian Academy of Sciences
(Russian Federation)
, том 41, с. 204-206
DOI
1997
An experimental study of charge effects in ultrasmall tunnel junctions
Krupenin V.A.
,
Lotkhov S.V.
,
Pashkin Y.A.
,
Presnov D.E.
в журнале
Physics Uspekhi
, издательство
Russian Academy of Sciences
(Russian Federation)
, том 40, № 5, с. 542-544
DOI
1997
Instability of single-electron memory at low temperatures in Al/AlOx/Al structures
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
в журнале
Journal of Experimental and Theoretical Physics
, издательство
Maik Nauka/Interperiodica Publishing
(Russian Federation)
, том 84, № 1, с. 190-196
DOI
1997
Investigation of the offset charge noise in single electron tunneling devices
Wolf H.
,
Ahlers F.J.
,
Niemeyer J.
,
Scherer H.
,
Weimann T.
,
Zorin A.B.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
в журнале
IEEE Transactions on Instrumentation and Measurement
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, том 46, № 2, с. 303-306
DOI
1997
Resistive state anomalies of superconducting nanostructures
Arutyunov K.Y.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Pavolotski A.B.
,
Rinderer L.
в журнале
Superlattices and Microstructures
, издательство
ELSEVIER SCIENCE BV
(PO BOX 211, AMSTERDAM, NETHERLANDS, 1000 AE)
, том 21, № A, с. 27-30
1996
Background charge noise in metallic single-electron tunneling devices
Zorin A.B.
,
Ahlers F.J.
,
Niemeyer Th Weimann J
,
Wolf H.
,
Krupenin V.A.
,
Lotkhov S.V.
в журнале
Physical Review B
, издательство
American Physical Society
(United States)
, том 53, № 20, с. 13682-13687
DOI
1996
Charge state instabilities in the single-electron trap
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
,
Zorin A.B.
,
Ahlers F.J.
,
Niemeyer J.
,
Scherer H.
,
Weimann T.
,
Wolf H.
в журнале
Czechoslovak Journal of Physics
, издательство
Kluwer Academic/Plenum Publishers
(United States)
, том 46, № 4, с. 2283-2284
DOI
1996
Detection of the single electron tunneling noise using Coulomb blockade electrometer
Zorin A.B.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Niemeyer J.
,
Presnov D.E.
,
Scherer H.
,
Wolf H.
,
Ahlers F.J.
,
Weimann T.
в журнале
Czechoslovak Journal of Physics
, издательство
Kluwer Academic/Plenum Publishers
(United States)
, том 46, № 4, с. 2281-2282
DOI
1996
On the reproducibility of the resistive transition anomalies in superconducting nanostructures
Arutyunov K.Yu
,
Lotkhov S.V.
,
Pavolotski A.B.
,
Presnov D.E.
,
Rinderer L.
в журнале
Helvetica physica acta
, том 69, № 2, с. 31-32
1996
Resistive state measurements of quasi-0-dimensional superconducting structures
Arutyunov K.Y.
,
Krupenin V.A.
,
Lotkhov S.V.
, Pavolotski A.N.,
Rinderer L.
в журнале
Czechoslovak Journal of Physics
, издательство
Kluwer Academic/Plenum Publishers
(United States)
, том 46, № 4, с. 2309-2310
DOI
1996
Single-electron structures of supersmall Al/AlOx/Al tunnelling junctions: manufacturing techniques and experimental results
Presnov D.E.
,
Krupenin V.A.
,
Lotkhov S.V.
в журнале
Physics Uspekhi
, издательство
Russian Academy of Sciences
(Russian Federation)
, том 39, № 8, с. 847-848
DOI
1993
Photo and electron-beam lithography sharing common stencil
Krupenin V.A.
,
Lotkhov S.V.
,
Vishenski S.V.
в журнале
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, издательство
AIP Publishing
(United States)
, том 11, № 6, с. 2132-2136
DOI
Статьи в сборниках
1996
Investigation of the offset charge noise in single electron tunneling devices
Ahlers F.J.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Niemeyer J.
,
Presnov D.E.
,
Scherer H.
,
Weimann T.
,
Wolf H.
,
Zorin A.B.
в сборнике
CPEM (Conference on Precision Electromagnetic Measurements) Digest. Proceedings of the 1996 Conference on Precision Electromagnetic Measurements (17-20 June 1996, Braunschweig, Germany)
, издательство
Institute of Electrical and Electronics Engineers
(Piscataway, NJ, United States)
, с. 507-508
DOI
1993
Single-charge traps bistability in complex systems of ultrasmall tunnel junctions
Lotkhov S.
,
Krupenin V.
,
Vyshenski S.
в сборнике
Int. Symp. "Nanostructures: physics and technology"
, место издания
St.Petersburg, Russia
, с. 77-77
Доклады на конференциях
2014
Noise properties of SET transistor made from highly doped SOI
(Устный)
Авторы:
Presnov D.E.
,
Amitonov S.V.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Zorin A.B.
,
Rudakov V.I.
International Conference “Micro- and Nanoelectronics – 2014” (ICMNE-2014)
, “Ershovo” resort, Zvenigorod, Moscow Region, Russia, Россия, 2014
Тезисы докладов
2014
Noise properties of SET transistor made from highly doped SOI
Presnov D.E.
,
Amitonov S.V.
,
Rudakov V.I.
,
Lotkhov S.V.
,
Zorin A.B.
,
Krupenin V.A.
в сборнике
Intenational Conference "Micro- and Nanoelectronics - 2014", ICMNE 2014, October 6-10, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts,
, место издания
Institute of Physics and Technology of the RAS,
, тезисы, с. O1-23
1996
Background charge influence on single-electron devices: single-electron transistor and trap
Presnov D.E.
,
Krupenin V.A.
,
Lotkhov S.V.
в сборнике
Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology
, место издания
Ioffe St.Petersburg, Russia, 24-28 June
, тезисы, с. 183-186
1996
Charge state instabilities in the single-electron trap
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
,
Zorin A.B.
,
Ahlers F.J.
,
Niemeyer J.
,
Scherer H.
,
Weimann T.
,
Wolf H.
в сборнике
Abstracts of the 21st International Conference on Low Temperature Physics
, место издания
Prague, Czech Republic, 8-14 August
, тезисы, с. 308
1996
Detection of the single-electron tunneling noise using Coulomb blockade electrometer
Zorin A.B.
,
Krupenin V.A.
,
Lotkhov S.V.
,
Niemeyer J.
,
Presnov D.E.
,
Scherer H.
,
Wolf H.
,
Ahlers F.J.
,
Weimann T.
в сборнике
Abstracts of the 21st International Conference on Low Temperature Physics
, место издания
Prague, Czech Republic, 8-14 August
, тезисы, с. 308
1996
Verification of a memory cell based on a single electron trap
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
,
Wolf H.
,
Ahlers F.J.
,
Niemeyer J.
,
Scherer H.
,
Weimann T.
,
Zorin A.B.
в сборнике
Abstracts of IX Trilateral German - Russian - Ukrainian Seminar on High-Temperature Superconductivity
, место издания
Gabelbach Germany, 22-25 September
, тезисы, с. 22
1995
Modified nanotechnology for fabrication of complex single-electron devices
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
в сборнике
Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology
, место издания
Ioffe St.Petersburg, Russia, 26-30 June
, тезисы, с. 354-356
1995
Noise in a Single-Electron Electrometer
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
в сборнике
VIII Trilateral German-Russian-Ukrainian Seminar on High-Temperature Superconductivity, Lviv, Ukraine, September 06¬09
, тезисы, с. P2-6
1995
Single-electron transistor as an electrometer for investigation of charge dynamics in structures with deep coulomb blockade
Krupenin V.A.
,
Lotkhov S.V.
,
Presnov D.E.
в сборнике
Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology
, место издания
Ioffe St.Petersburg, Russia, 26-30 June
, тезисы, с. 427-430