ИСТИНА

Lotkhov S.V.

Соавторы: Зорин А.Б., Крупенин В.А., Niemeyer J., Преснов Д.Е., Scherer H., Weimann T., Wolf H., Ahlers F.J., Zangerle H., Rinderer L., Арутюнов К.Ю., Bogoslovsky S.A., Pavolotski A.B. показать полностью..., Pekola J.P., Jalali-Jafari B., Kemppinen A., O-P S., Pashkin Y.A., Вышенский С.В., Ahlers F.J., Balashov D.V., Devoille L., Dolata R., F-Im B., Feltin N., G-D W., Götz M., Kafanov S., Khabipov M., Könemann J., Mackrodt B., Maibaum F., Manninen A.J., Piquemal F., Tolkacheva E.M.,  Rudakov V., Амитонов С.В.

36 статей, 1 доклад на конференции, 8 тезисов докладов

Количество цитирований статей в журналах по данным Web of Science: 608, Scopus: 549

IstinaResearcherID (IRID): 543880

Деятельность

• Статьи в журналах

  • 
    • 2016 Detection of on-chip generated weak microwave radiation using superconducting normal-metal SET
    • Jalali-Jafari B., Lotkhov S.V., Zorin A.B.
    • в журнале Applied Sciences, издательство MDPI (Basel, Switzerland), том 6, № 2, с. 35-1-35-15 DOI
  • 
    • 2016 Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation
    • Lotkhov S.V., Jalali-Jafari B., Zorin A.B.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 108, № 17, с. 172603-1-172603-4 DOI
  • 
    • 2012 A hybrid superconductor-normal metal electron trap as a photon detector
    • Lotkhov S.V., Zorin A.B.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 100, № 24, с. 242601-1-242601-3 DOI
  • 
    • 2012 Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment
    • Lotkhov S.V., Zorin A.B.
    • в журнале Journal of Physics: Conference Series, издательство IOP Publishing ([Bristol, UK], England), том 400, с. 042040-042040 DOI
  • 
    • 2011 Long hold times in a two-junction electron trap
    • Kemppinen A., Lotkhov S.V., O-P Saira, Zorin A.B., Pekola J.P., Manninen A.J.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 99, с. 142106-142106 DOI
  • 
    • 2011 Single-charge escape processes through a hybrid turnstile in a dissipative environment
    • Lotkhov S.V., O-P Saira, Pekola J.P., Zorin A.B.
    • в журнале New Journal of Physics, издательство IOP Publishing ([Bristol, UK], England), том 13, с. 013040-013040 DOI
  • 
    • 2011 Towards the observation of phase-locked Bloch oscillations in arrays of small Josephson junctions
    • Maibaum F., Lotkhov S.V., Zorin A.B.
    • в журнале Physical Review B, издательство American Physical Society (United States), том 84, с. 174514-174514 DOI
  • 
    • 2009 Pumping properties of the hybrid single-electron transistor in dissipative environment
    • Lotkhov S.V., Kemppinen A., Kafanov S., Pekola J.P., Zorin A.B.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 95, № 11, с. 112507-112507 DOI
  • 
    • 2007 Cooper pair transport in a resistor-biased Josephson junction array
    • Lotkhov S.V., Krupenin V.A., Zorin A.B.
    • в журнале IEEE Transactions on Instrumentation and Measurement, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 56, № 2, с. 491-494 DOI
  • 
    • 2006 Ground-state characterization of Nb charge-phase Josephson qubits
    • Zangerle H., Könemann J., Mackrodt B., Dolata R., Lotkhov S.V., Bogoslovsky S.A., Götz M., Zorin A.B.
    • в журнале Physical Review B, издательство American Physical Society (United States), том 73, № 22, с. 224527-1-224527-8 DOI
  • 
    • 2006 Low hysteretic behavior of Al/AlOx/Al Josephson junctions
    • Lotkhov S.V., Tolkacheva E.M., Balashov D.V., Khabipov M.I., F-I Buchholz, Zorin A.B.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 89, № 13, с. 132115-132115 DOI
  • 
    • 2005 Steps towards a capacitance standard based on single-electron counting at PTB
    • Scherer H., Lotkhov S.V., G-D Willenberg, Zorin A.B.
    • в журнале IEEE Transactions on Instrumentation and Measurement, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 54, с. 666-669
  • 
    • 2003 Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment
    • Lotkhov S.V., Bogoslovsky S.A., Zorin A.B., Niemeyer J.
    • в журнале Physical Review Letters, издательство American Physical Society (United States), том 91, № 19, с. 197002-1-197002-4 DOI
  • 
    • 2003 Progress in measurements of electron pump by means of a CCC
    • Feltin N., Devoille L., Piquemal F., Lotkhov S.V., Zorin A.B.
    • в журнале IEEE Transactions on Instrumentation and Measurement, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 52, № 4, с. 599-603
  • 
    • 2001 Operation of a three-junction single-electron pump with on-chip resistors
    • Lotkhov S.V., Bogoslovsky S.A., Zorin A.B., Niemeyer J.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 78, № 7, с. 946-948 DOI
  • 
    • 2000 Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of R-pump
    • Zorin A.B., Zangerle H., Lotkhov S.V., Niemeyer J.
    • в журнале Journal of Applied Physics, издательство AIP Publishing (United States), том 88, № 5, с. 2665-2670 DOI
  • 
    • 2000 Fewer-junction single-electron trap with an ohmic resistor
    • Lotkhov S.V., Zorin A.B., Zangerle H., Niemeyer J.
    • в журнале Physica B: Condensed Matter, издательство Elsevier BV (Netherlands), том 280, с. 403-404
  • 
    • 1999 A Superconducting Electrometer Based on the Resitively Shunted Bloch Transistor
    • Lotkhov S.V., Zangerle H., Zorin A.B., Weimann Th, Scherer H., Niemeyer J.
    • в журнале IEEE Transactions on Applied Superconductivity, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 9, с. 3664-3667
  • 
    • 1999 Charging and heating effects in a system of coupled single-electron devices
    • Krupenin V.A., Lotkhov S.V., Scherer H., Zorin A.B., Weimann Th, Ahlers F.J., Niemeyer J., Wolf H.
    • в журнале Physical Review B, издательство American Physical Society (United States), том 59, № 16, с. 10778-10784 DOI
  • 
    • 1999 Highly sensitive electrometers based on single Cooper pair tunneling
    • Zorin A.B., Lotkhov S.V., Pashkin Yu A., Zangerle H., Krupenin V.A., Weimann Th, Scherer H., Niemeyer J.
    • в журнале Journal of Superconductivity (Plenum), том 12, № 6, с. 747-755 DOI
  • 
    • 1999 Resistive-state anomaly in superconducting nanostructures
    • Arutyunov K.Y., Presnov D.A., Lotkhov S.V., Pavolotski A.B., Rinderer L.
    • в журнале Physical Review B, издательство American Physical Society (United States), том 59, № 9, с. 6487-6498 DOI
  • 
    • 1999 Storage capabilities of a four-junction single-electron trap with an on-chip resistor
    • Lotkhov S.V., Zangerle H., Zorin A.B., Niemeyer J.
    • в журнале Applied Physics Letters, издательство AIP Publishing (United States), том 75, № 17, с. 2665-2667
  • • 1998 Sensing of dynamic charge states using single-electron tunneling transistors
    • Krupenin V.A., Lotkhov S.V., Scherer H., Zorin A.B., Ahlers F.J., Niemeyer J., Wolf H.
    • в журнале Physics Uspekhi, издательство Russian Academy of Sciences (Russian Federation), том 41, с. 204-206 DOI
  • • 1997 An experimental study of charge effects in ultrasmall tunnel junctions
    • Krupenin V.A., Lotkhov S.V., Pashkin Y.A., Presnov D.E.
    • в журнале Physics Uspekhi, издательство Russian Academy of Sciences (Russian Federation), том 40, № 5, с. 542-544 DOI
  • 
    • 1997 Instability of single-electron memory at low temperatures in Al/AlOx/Al structures
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • в журнале Journal of Experimental and Theoretical Physics, издательство Maik Nauka/Interperiodica Publishing (Russian Federation), том 84, № 1, с. 190-196 DOI
  • 
    • 1997 Investigation of the offset charge noise in single electron tunneling devices
    • Wolf H., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Zorin A.B., Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • в журнале IEEE Transactions on Instrumentation and Measurement, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 46, № 2, с. 303-306 DOI
  • 
    • 1997 Resistive state anomalies of superconducting nanostructures
    • Arutyunov K.Y., Krupenin V.A., Lotkhov S.V., Pavolotski A.B., Rinderer L.
    • в журнале Superlattices and Microstructures, издательство ELSEVIER SCIENCE BV (PO BOX 211, AMSTERDAM, NETHERLANDS, 1000 AE), том 21, № A, с. 27-30
  • 
    • 1996 Background charge noise in metallic single-electron tunneling devices
    • Zorin A.B., Ahlers F.J., Niemeyer Th Weimann J, Wolf H., Krupenin V.A., Lotkhov S.V.
    • в журнале Physical Review B, издательство American Physical Society (United States), том 53, № 20, с. 13682-13687 DOI
  • 
    • 1996 Charge state instabilities in the single-electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Zorin A.B., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Wolf H.
    • в журнале Czechoslovak Journal of Physics, издательство Kluwer Academic/Plenum Publishers (United States), том 46, № 4, с. 2283-2284 DOI
  • 
    • 1996 Detection of the single electron tunneling noise using Coulomb blockade electrometer
    • Zorin A.B., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Wolf H., Ahlers F.J., Weimann T.
    • в журнале Czechoslovak Journal of Physics, издательство Kluwer Academic/Plenum Publishers (United States), том 46, № 4, с. 2281-2282 DOI
  • • 1996 On the reproducibility of the resistive transition anomalies in superconducting nanostructures
    • Arutyunov K.Yu, Lotkhov S.V., Pavolotski A.B., Presnov D.E., Rinderer L.
    • в журнале Helvetica physica acta, том 69, № 2, с. 31-32
  • 
    • 1996 Resistive state measurements of quasi-0-dimensional superconducting structures
    • Arutyunov K.Y., Krupenin V.A., Lotkhov S.V., Pavolotski A.N., Rinderer L.
    • в журнале Czechoslovak Journal of Physics, издательство Kluwer Academic/Plenum Publishers (United States), том 46, № 4, с. 2309-2310 DOI
  • • 1996 Single-electron structures of supersmall Al/AlOx/Al tunnelling junctions: manufacturing techniques and experimental results
    • Presnov D.E., Krupenin V.A., Lotkhov S.V.
    • в журнале Physics Uspekhi, издательство Russian Academy of Sciences (Russian Federation), том 39, № 8, с. 847-848 DOI
  • 
    • 1993 Photo and electron-beam lithography sharing common stencil
    • Krupenin V.A., Lotkhov S.V., Vishenski S.V.
    • в журнале Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, издательство AIP Publishing (United States), том 11, № 6, с. 2132-2136 DOI

• Статьи в сборниках

  • 
    • 1996 Investigation of the offset charge noise in single electron tunneling devices
    • Ahlers F.J., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Weimann T., Wolf H., Zorin A.B.
    • в сборнике CPEM (Conference on Precision Electromagnetic Measurements) Digest. Proceedings of the 1996 Conference on Precision Electromagnetic Measurements (17-20 June 1996, Braunschweig, Germany), издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), с. 507-508 DOI
  • • 1993 Single-charge traps bistability in complex systems of ultrasmall tunnel junctions
    • Lotkhov S., Krupenin V., Vyshenski S.
    • в сборнике Int. Symp. "Nanostructures: physics and technology", место издания St.Petersburg, Russia, с. 77-77

• Доклады на конференциях

  • • 2014 Noise properties of SET transistor made from highly doped SOI (Устный)
    • Авторы: Presnov D.E., Amitonov S.V., Krupenin V.A., Lotkhov S.V., Zorin A.B., Rudakov V.I.
    • International Conference “Micro- and Nanoelectronics – 2014” (ICMNE-2014), “Ershovo” resort, Zvenigorod, Moscow Region, Russia, Россия, 2014

• Тезисы докладов

  • • 2014 Noise properties of SET transistor made from highly doped SOI
    • Presnov D.E., Amitonov S.V., Rudakov V.I., Lotkhov S.V., Zorin A.B., Krupenin V.A.
    • в сборнике Intenational Conference "Micro- and Nanoelectronics - 2014", ICMNE 2014, October 6-10, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts,, место издания Institute of Physics and Technology of the RAS,, тезисы, с. O1-23
  • • 1996 Background charge influence on single-electron devices: single-electron transistor and trap
    • Presnov D.E., Krupenin V.A., Lotkhov S.V.
    • в сборнике Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, место издания Ioffe St.Petersburg, Russia, 24-28 June, тезисы, с. 183-186
  • • 1996 Charge state instabilities in the single-electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Zorin A.B., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Wolf H.
    • в сборнике Abstracts of the 21st International Conference on Low Temperature Physics, место издания Prague, Czech Republic, 8-14 August, тезисы, с. 308
  • • 1996 Detection of the single-electron tunneling noise using Coulomb blockade electrometer
    • Zorin A.B., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Wolf H., Ahlers F.J., Weimann T.
    • в сборнике Abstracts of the 21st International Conference on Low Temperature Physics, место издания Prague, Czech Republic, 8-14 August, тезисы, с. 308
  • • 1996 Verification of a memory cell based on a single electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Wolf H., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Zorin A.B.
    • в сборнике Abstracts of IX Trilateral German - Russian - Ukrainian Seminar on High-Temperature Superconductivity, место издания Gabelbach Germany, 22-25 September, тезисы, с. 22
  • • 1995 Modified nanotechnology for fabrication of complex single-electron devices
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • в сборнике Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, место издания Ioffe St.Petersburg, Russia, 26-30 June, тезисы, с. 354-356
  • • 1995 Noise in a Single-Electron Electrometer
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • в сборнике VIII Trilateral German-Russian-Ukrainian Seminar on High-Temperature Superconductivity, Lviv, Ukraine, September 06¬09, тезисы, с. P2-6
  • • 1995 Single-electron transistor as an electrometer for investigation of charge dynamics in structures with deep coulomb blockade
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • в сборнике Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, место издания Ioffe St.Petersburg, Russia, 26-30 June, тезисы, с. 427-430